参数资料
型号: DS2045W-100#
厂商: Maxim Integrated
文件页数: 2/12页
文件大小: 0K
描述: IC NVSRAM 1MBIT 100NS 256BGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: NVSRAM(非易失 SRAM)
存储容量: 1M (128K x 8)
速度: 100ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 256-BBGA
供应商设备封装: 256-BGA(27x27)
包装: 托盘
DS2045W 3.3V Single-Piece 1Mb
Nonvolatile SRAM
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground .................-0.3V to +4.6V
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range ...............................-40°C to +85°C
Soldering Temperature .....................See IPC/JEDEC J-STD-020
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(T A = -40 ° C to +85 ° C)
PARAMETER
Supply Voltage
Input Logic 1
Input Logic 0
SYMBOL
V CC
V IH
V IL
CONDITIONS
MIN
3.0
2.2
0
TYP
3.3
MAX
3.6
V CC
0.4
UNITS
V
V
V
DC ELECTRICAL CHARACTERISTICS
(V CC = 3.3V ±0.3V, T A = -40 ° C to +85 ° C.)
PARAMETER
Input Leakage Current
I/O Leakage Current
Output-Current High
Output-Current Low
Output-Current Low RST
Standby Current
Operating Current
Write Protection Voltage
SYMBOL
I IL
I IO
I OH
I OL
I OL RST
I CCS1
I CCS2
I CCO1
V TP
CONDITIONS
CE = V CC
At 2.4V
At 0.4V
At 0.4V (Note 1)
CE = 2.2V
CE = V CC - 0.2V
t RC = 200ns, outputs open
MIN
-1.0
-1.0
-1.0
2.0
10.0
2.8
TYP
0.5
0.2
2.9
MAX
+1.0
+1.0
7
5
50
3.0
UNITS
μA
μA
mA
mA
mA
mA
mA
V
CAPACITANCE
(T A = +25 ° C)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C IN
C OUT
Not tested
Not tested
CONDITIONS
MIN
TYP
7
7
MAX
UNITS
pF
pF
2
_____________________________________________________________________
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