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参数资料
| 型号： | DS2045W-100# |
| 厂商： | Maxim Integrated |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 1MBIT 100NS 256BGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 256-BBGA |
| 供应商设备封装： | 256-BGA（27x27） |
| 包装： | 托盘 |
DS2045W 3.3V Single-Piece 1Mb
Nonvolatile SRAM
Functional Diagram
CE
V CC
V TP REF
CURRENT-LIMITING
RESISTOR
DELAY TIMING
CIRCUITRY
CHARGER
UNINTERRUPTED
POWER SUPPLY
FOR THE SRAM
V CC
CE
RST
V SW REF
OE
WE
SRAM
DQ0–7
REDUNDANT LOGIC
ML
CURRENT-LIMITING
RESISTOR
REDUNDANT
SERIES FET
GND
OE
WE
A0–A16
BATTERY-CHARGING/SHORTING
PROTECTION CIRCUITRY (UL RECOGNIZED)
DS2045W
Detailed Description
The DS2045W is a 1Mb (128kb x 8 bits) fully static, NV
memory similar in function and organization to the
DS1245W NV SRAM, but containing a rechargeable ML
battery. The DS2045W NV SRAM constantly monitors
V CC for an out-of-tolerance condition. When such a con-
dition occurs, the lithium energy source is automatically
switched on and write protection is unconditionally
enabled to prevent data corruption. There is no limit to
the number of write cycles that can be executed and no
additional support circuitry is required for microprocessor
interfacing. This device can be used in place of SRAM,
EEPROM, or flash components.
The DS2045W assembly consists of a low-power SRAM,
an ML battery, and an NV controller with a battery charg-
er, integrated on a standard 256-ball, 27mm 2 BGA sub-
strate. Unlike other surface-mount NV memory modules
that require the battery to be removable for soldering,
the internal ML battery can tolerate exposure to con-
vection reflow soldering temperatures allowing this sin-
gle-piece component to be handled with standard BGA
assembly techniques.
The DS2045W also contains a power-supply monitor
output, RST , which can be used as a CPU supervisor
for a microprocessor.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2045W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2045Y | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Single-Piece 1Mb Nonvolatile SRAM |
| DS2045Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2045Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2045Y20# | 制造商:Maxim Integrated Products 功能描述: |
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