参数资料
型号: EM6617SO24A
元件分类: MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N沟道的PowerTrench MOSFET的
文件页数: 53/67页
文件大小: 824K
代理商: EM6617SO24A
EM6617
03/02 REV. C/442
Copyright
2002, EM Microelectronic-Marin SA
57
www.emmicroelectronic.com
21. Electrical Specification
21.1 Absolute Maximum Ratings
Min.
Max.
Units
Power supply VDD-VSS
- 0.2
+ 6.5
V
Input voltage
VSS - 0,2
VDD+0,2
V
Storage temperature
- 40
+ 125
°C
Electrostatic discharge to
Mil-Std-883C method 3015.7 with ref. to VSS
-2000
+2000
V
Maximum soldering conditions
10s x 250
°C
Stresses above these listed maximum ratings may cause permanent damage to the device.
Exposure beyond specified electrical characteristics may affect device reliability or cause malfunction.
21.2 Handling Procedures
This device has built-in protection against high static voltages or electric fields; however, anti-static
precautions should be taken as for any other CMOS component.
Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the
supply voltage range.
21.3 Standard Operating Conditions
Parameter
MIN
TYP
MAX
Unit
Description
Temperature
-40
25
85
°C
VDD_Range 1
(note 1)
2.0
3.0
5.5
V
With internal voltage regulator
VSS
0
V
Reference terminal, die substrate
CVDDCA (note 2)
100
nF
Regulated voltage capacitor
Fq
32768
Hz
Nominal frequency
Rqs
35
KOhm
Typical quartz serial resistance
CL
8.2
pF
Typical quartz load capacitance
df/f
+/- 30
ppm
Quartz frequency tolerance
Note 1:
The minimum VDD of 2.0V allows proper system functionality for the core Logic and the EEPROM,
However the ADC minimum voltage is > 2.6V for full range conversion and 0.2 LSB error.
Note 2:
This capacitor filters switching noise from VDD to keep it away from the internal logic cells.
In noisy systems the capacitor should be chosen bigger than minimum value.
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