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参数资料
| 型号： | FDA15N65 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 650V 16A TO-3PN |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 产品目录绘图： | MOSFET TO-3P(N) |
| 标准包装： | 30 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 650V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 440 毫欧 @ 8A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 63nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3095pF @ 25V |
| 功率 - 最大： | 260W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Device Marking
FDA15N65
Device
FDA15N65
Package
TO-3PN
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 μ A, T J = 25 ° C
I D = 250 μ A, Referenced to 25 ° C
V DS = 650V, V GS = 0V
V DS = 520V, T C = 125 ° C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
650
--
--
--
--
--
--
0.65
--
--
--
--
--
--
1
10
100
-100
V
V/ ° C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 8A
3.0
--
--
0.36
5.0
0.44
V
Ω
g FS
Forward Transconductance
V DS = 40V, I D = 8A
(Note 4)
--
19.2
--
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
--
--
--
2380
295
23.6
3095
385
35.5
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 325V, I D = 15A
R G = 21.7 Ω
V DS = 520V, I D = 15A
V GS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
65
125
105
65
48.5
14.0
21.2
140
260
220
140
63.0
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
16
64
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0V, I S = 16A
--
--
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 15A
dI F /dt =100A/ μ s
(Note 4)
--
--
496
5.69
--
--
ns
μ C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.6mH, I AS = 16A, V DD = 50V, R G = 25 Ω , Starting T J = 25 ° C
3. I SD ≤ 16A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Pulse Test: Pulse width ≤ 300 μ s, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA15N65 Rev. A
2
www.fairchildsemi.com
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