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| 型号： | FDC608PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 5.8A SSOT-6 |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 5.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1330pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC608PZDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A,Referenced to 25 ° C
–20
–10
V
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = –16 V,
V GS = ± 12 V,
V GS = 0 V
V DS = 0 V
–1
± 10
μ A
μ A
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A,Referenced to 25 ° C
V GS = –4.5V, I D = –5.8 A
–0.4
–1.0
3
26
–1.5
30
V
mV/ ° C
m ?
On–Resistance
V GS = –2.5V, I D = –5.0 A
V GS = –4.5V,I D = –5.8A,T J =125 ° C
38
35
43
I D(on)
On–State Drain Current
V GS = –4.5 V, V DS = –5 V
–20
A
g FS
Forward Transconductance
V DS = –10 V,
I D = –5.8 A
22
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1330
270
230
pF
pF
pF
R G
Gate Resistance
V GS = 15 mV, f = 1.0 MHz
12
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –10 V,
V GS = –4.5 V,
V DS = –10 V,
V GS = –4.5 V
I D = –1 A,
R GEN = 6 ?
I D = –5.8 A,
13
8
91
60
17
3
24
16
145
96
23
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
6
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = –1.3 A
(Note 2)
–0.7
–1.2
V
Voltage
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = –5.8 A,
I F = –5.8 A,
d iF /d t = 100A/μs
d iF /d t = 100A/μs
40
15
60
23
ns
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
78°C/W when mounted on a 1in pad of 2oz copper on FR-4 board.
a.
b.
2
156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC608PZ Rev B (W)
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相关代理商/技术参数 |
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|---|---|
| FDC610PZ | 功能描述:MOSFET -30V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC610PZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 4.9mA |
| FDC610PZ_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| FDC6301 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET |
| FDC6301N | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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