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| 型号： | FDC6392S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.2A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 369pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC6392SDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–20
–16
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = –16 V,
V GS = 12 V,
V GS = –12 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
–1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –4.5 V, I D = –2.2 A
V GS = –2.5 V, I D = –1.8 A
–0.6
–1.0
3
101
152
–1.5
150
200
V
mV/ ° C
m ?
V GS =–4.5 V, I D =–2.2 A, T J =125 ° C
132
211
I D(on)
On–State Drain Current
V GS = –4.5 V, V DS = –5 V
–6
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –2.2 A
6
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V,
f = 1.0 MHz
V GS = 0 V,
369
80
39
pF
pF
pF
R G
Gate Resistance
V GS = –15 mV, f = 1.0 MHz
7.6
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V DD = –10 V, I D = –1 A,
V GS = –4.5 V, R GEN = 6 ?
8
11
13
4
16
20
23
8
ns
ns
ns
ns
Q g
Q gs
Total Gate Charge
Gate–Source Charge
V DS = –10 V,
V GS = –4.5 V
I D = –2.2 A,
3.7
1
5.2
nC
nC
Q gd
Gate–Drain Charge
1
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Sourc e Diode Forward Current
–0.8
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = –0.8 A (Note 2)
–0.8
–1.2
V
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = –2.2 A,
d iF /d t = 100 A/μs
5.4
1.2
nS
nC
Schottky Diode Characteristics
I R
Reverse Leakage
V R = 20 V
T J = 25 ° C
148
400
μ A
T J = 100 ° C
14
20
mA
V R = 10V
T J = 25 ° C
T J = 100 ° C
55
5.2
200
10
μ A
mA
V F
Forward Voltage
I F = 500mA
T J = 25 ° C
0.34
0.4
V
T J = 100 ° C
0.26
0.35
I F = 1 A
T J = 25 ° C
T J = 100 ° C
0.40
0.35
0.45
0.42
V
FDC6392S Rev C(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6392S_Q | 功能描述:MOSFET 20V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6401N | 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6401N_NL | 功能描述:MOSFET Dual N-Ch 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6401N_Q | 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6401N-CUT TAPE | 制造商:FAIRCHILD 功能描述:20V 70 mOhm Dual N-Ch 2.5V Specified PowerTrench Mosfet SSOT-6 |
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