- 您现在的位置：买卖IC网 > Datasheet目录416 > FDC6506P (Fairchild Semiconductor)MOSFET P-CHAN DUAL 30V SSOT6 Datasheet资料下载
参数资料
| 型号： | FDC6506P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN DUAL 30V SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 170 毫欧 @ 1.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 190pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC6506PDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25 ° C
V DS = -24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
-30
-20
-1
100
-100
V
mV/ ° C
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = -250 μ A
I D = -250 μ A, Referenced to 25 ° C
V GS = -10 V, I D = -1.8 A
V GS = -10 V, I D = -1.8 A @125 ° C
-1
-1.8
4
0.14
0.20
-3
0.17
0.27
V
mV/ ° C
?
V GS = -4.5 V, I D = -1.4 A
0.22
0.28
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = -10 V, V DS = - 5 V
V DS = -5 V, I D = -1.8 A
-10
3
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -15 V, V GS = 0 V,
f = 1.0 MHz
190
70
30
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -15 V, I D = -1 A,
V GS = -4.5 V, R GEN = 6 ?
V DS = -5 V, I D = -1.8 A,
V GS = -10 V
7
8
14
2
2.3
1
0.8
14
16
25
6
3.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-0.8
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = -0.8 A
(Note 2)
-0.8
-1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R θ JC is guaranteed by design while R θ JA is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
a) 130 ° C/W when
mounted on a 0.125 in 2
pad of 2 oz. copper.
b) 140 ° C/W when
mounted on a 0.005 in 2
pad of 2 oz. copper.
c) 180 ° C/W when
mounted on a 0.0015 in 2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC6506P Rev. C
相关PDF资料 |
PDF描述 |
|---|---|
| FDC653N | MOSFET N-CH 30V 5A SSOT-6 |
| FDC654P | MOSFET P-CH 30V 3.6A SSOT-6 |
| FDC655BN | MOSFET N-CH 30V 6.3A SSOT-6 |
| FDC6561AN | MOSFET N-CHAN DUAL 30V SSOT6 |
| FDC658AP | MOSFET P-CH SGL LL 30V 4A SSOT6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6506P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6 |
| FDC6506P_Q | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC653 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC653N_F095 | 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。