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| 型号： | FDC654P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3.6A SSOT-6 |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 3.6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 298pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 其它名称： | FDC654PDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A,Referenced to 25 ° C
–30
–22
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = –24 V,
V GS = 20 V,
V GS = –20 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
–1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–1
–1.9
4
–3
V
mV/ ° C
R DS(on)
Static Drain–Source
V GS = –10 V,
I D = –3.6 A
63
75
m ?
On–Resistance
V GS = –4.5 V, I D = –2.7 A
V GS = –10 V, I D = –3.6A,T J =125 ° C
100
90
125
115
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = –4.5 V,
V DS = –5 V,
V DS = –5 V
I D = –3.6 A
–5
6
A
S
Dynami c Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –15 V,
f = 1.0 MHz
V GS = 0 V,
298
83
39
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –15 V,
V GS = –10 V,
V DS = –15 V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –3.6 A,
6
13
11
6
6.2
1
12
23
20
12
9
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
1.2
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = –1.3 A
(Note 2)
–0.8
–1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a)
78°C/W when
mounted on a 1in 2 pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDC654P Rev E1(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC654P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC654P_G | 制造商:FAIRCHILD 功能描述:MOSFET, -30V/3.6A, SSOT6 (Halogen Free) |
| FDC654P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC654P Series 30 V 75 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-6 |
| FDC655AN | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC655AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
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