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| 型号： | FDC6561AN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 30V SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 220pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDC6561ANDKR |
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
I D = 250 μA, Referenced to 25 C
BV DSS
? BV DSS / ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 250 μA
V DS = 24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
o
T J = 55 o C
30
23.6
1
10
100
-100
V
mV/ o C
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
? V GS(th) / ? T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V GS = 10 V, I D = 2.5 A
1
1.8
-4
0.082
3
0.095
V
mV/ o C
?
T J = 125 C
V GS = 4.5 V, I D = 2.0 A
o
0.122
0.113
0.152
0.145
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 5 V, I D = 2.5 A
10
5
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
220
50
25
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 5 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DS = 15 V, I D = 2.5 A
V GS = 5 V
6
10
12
2
2.3
0.7
0.9
12
18
22
6
3.2
1
1.3
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I S
Continuous Source Diode Current
0.75
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.75 A
(Note 2)
0.78
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed
by design while R θ CA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
a. 130 O C/W on a 0.125 in 2 pad of
2oz copper.
b. 140 O C/W on a 0.005 in 2 pad of
2oz copper.
c. 180 O C/W on a minimum pad.
FDC6561AN Rev.C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6561AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du |
| FDC6561AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6 |
| FDC6561AN_Q | 功能描述:MOSFET N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6561AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC6561AN Series 30 V 0.095 Ohm Dual N-Ch Logic Level PowerTrench Mosfet SSOT-6 |
| FDC658AP | 功能描述:MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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