参数资料
型号: FDC6561AN
厂商: Fairchild Semiconductor
文件页数: 5/5页
文件大小: 0K
描述: MOSFET N-CHAN DUAL 30V SSOT6
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 08/April/2008
产品目录绘图: MOSFET SuperSOT-6
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 95 毫欧 @ 2.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 3.2nC @ 5V
输入电容 (Ciss) @ Vds: 220pF @ 15V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-SSOT
包装: 标准包装
产品目录页面: 1602 (CN2011-ZH PDF)
其它名称: FDC6561ANDKR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx?
CoolFET?
CROSSVOLT?
E 2 CMOS TM
FACT?
FACT Quiet Series?
FAST ?
FASTr?
GTO?
HiSeC?
ISOPLANAR?
MICROWIRE?
POP?
PowerTrench?
QS?
Quiet Series?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
TinyLogic?
UHC?
VCX?
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative or
In Design
First Production
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
相关PDF资料
PDF描述
FDC658AP MOSFET P-CH SGL LL 30V 4A SSOT6
FDC658P MOSFET P-CH 30V 4A SSOT-6
FDC855N MOSFET N-CH 30V 6.1A 6-SSOT
FDC8601 MOSFET N-CH 100V TRENCH SSOT-6
FDC8602 MOSFET N-CH DUAL 100V 6-SSOT
相关代理商/技术参数
参数描述
FDC6561AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du
FDC6561AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
FDC6561AN_Q 功能描述:MOSFET N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6561AN-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC6561AN Series 30 V 0.095 Ohm Dual N-Ch Logic Level PowerTrench Mosfet SSOT-6
FDC658AP 功能描述:MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube