- 您现在的位置：买卖IC网 > Datasheet目录416 > FDC658AP (Fairchild Semiconductor)MOSFET P-CH SGL LL 30V 4A SSOT6 Datasheet资料下载
参数资料
| 型号： | FDC658AP |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH SGL LL 30V 4A SSOT6 |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.1nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 470pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC658APDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DSS
' T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
I D = -250 P A, V GS = 0V
I D = -250 P A,
Referenced to 25°C
V GS = 0V, V DS = -24V
V GS = r 25V, V DS = 0V
-30
-22
-1
r 100
V
mV/°C
P A
nA
On Characteristics (Note 2)
V GS(TH)
' V GS(TH )
' T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = -250 P A
I D = -250 P A,
Referenced to 25°C
-1
-1.8
4
-3
V
mV/°C
I D = -4A, V GS = -10V
44
50
r DS(on)
I D(ON)
g FS
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
I D = -3.4A, V GS = -4.5V
I D = -4A, V GS = -10V,
T J = 125°C
V GS = -10V, V DS = -5V
I D = -4A, V DS = -5V
-20
67
60
8.4
75
70
m :
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -15V, V GS = 0V,
f = 1MHz
470
126
61
pF
pF
pF
Switching Characteristics (Note 2)
t d(on)
Turn-On Delay Time
7
14
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -15V, I D = -1A
V GS = -10V, R GEN = 6 :
V DS = -15V, I D = -4A,
V GS = -5V
12
16
6
6
2.1
2
22
29
12
8.1
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0V, I S = -1.3 A (Note 2)
-0.77
-1.2
V
Notes:
1: R T JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R T JC is guaranteed by design while R T CA is determined by the user's board design.
a) 78 o C/W when mounted on a
1 in 2 pad of 2 oz copper
Scale 1: 1 on letter size paper
2: Pulse Test: Pulse Width < 300 P s, Duty Cycle < 2.0%
FDC658AP Rev. B 1
2
b) 156 o C/W whe mounted on a
minimum pad of 2 oz copper
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDC658P | MOSFET P-CH 30V 4A SSOT-6 |
| FDC855N | MOSFET N-CH 30V 6.1A 6-SSOT |
| FDC8601 | MOSFET N-CH 100V TRENCH SSOT-6 |
| FDC8602 | MOSFET N-CH DUAL 100V 6-SSOT |
| FDC86244 | MOSFET N-CH 150V 2.3A 6SSOT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC658P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC658P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC658P | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 50 MO SSOT6 |
| FDC658P-NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDC6901L | 功能描述:MOSFET Integ. Load Switch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。