参数资料
型号: FDC8886
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 30V 6.5A 6-SSOT
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: *
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 6.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 7.4nC @ 10V
输入电容 (Ciss) @ Vds: 465pF @ 15V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: SOT-6
供应商设备封装: 6-SSOT
包装: 带卷 (TR)
Typical Characteristics T J = 25 °C unless otherwise noted
25
20
V GS = 10 V
V GS = 6 V
V GS = 4.5 V
V GS = 4 V
3.5
3.0
V GS = 3.5 V
V GS = 4 V
15
10
V GS = 3.5 V
2.5
2.0
1.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4.5 V
V GS = 6 V
5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.0
V GS = 10 V
0
0
0.4
0.8
1.2
1.6
2.0
0.5
0
5
10
15
20
25
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
1.4
1.3
I D = 6.5 A
V GS = 10 V
80
60
I D = 6.5 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
1.1
1.0
0.9
0.8
40
20
T J = 125 o C
T J = 25 o C
0.7
-75
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( o C )
0
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance
vs Junction Temperature
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to
Source Voltage
30
V GS = 0 V
10
20
V DS = 5 V
T J = 150 o C
15
10
T J = 150 o C
1
T J = 25 o C
5
T J = 25 o C
T J = -55 o C
0.1
T J = -55 o C
0
1
2
3
4
5
0.01
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
3
www.fairchildsemi.com
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