参数资料
型号: FDC8886
厂商: Fairchild Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 30V 6.5A 6-SSOT
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: *
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 6.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 7.4nC @ 10V
输入电容 (Ciss) @ Vds: 465pF @ 15V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: SOT-6
供应商设备封装: 6-SSOT
包装: 带卷 (TR)
Typical Characteristics T J = 25 °C unless otherwise noted
10
500
8
I D = 6.5 A
V DD = 10 V
C iss
V DD = 15 V
6
100
C oss
V DD = 20 V
4
2
f = 1 MHz
0
0
1
2
3
4
5
6
V GS = 0 V
10
0.1
1
10
C rss
30
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
7
6
T J = 25 o C
5
8
6
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
V GS = 10 V
4
3
T J = 100 o C
4
V GS = 4.5 V
R θ JA = 78 C/W
2
T J = 125 o C
2
o
1
0.01
0.1
1
5
0
25
50
75
100
125
150
T A , AMBIENT TEMPERATURE ( C )
30
t AV , TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
o
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
200
10
1
100 μ s
100
SINGLE PULSE
R θ JA = 175 o C/W
T A = 25 o C
THIS AREA IS
LIMITED BY r DS(on)
1 ms
10 ms
10
0.1
SINGLE PULSE
T J = MAX RATED
R θ JA = 175 o C/W
T A = 25 o C
100 ms
1s
10 s
DC
1
10
10
10
10
0.01
0.01
0.1
1
10
100200
0.5 -4
10
-3
-2
-1
1
10
100
3
V DS , DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
?2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
4
www.fairchildsemi.com
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