参数资料
型号: FDD18N20LZ
厂商: Fairchild Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CH 200V DPAK-3
标准包装: 2,500
系列: UniFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 16A
开态Rds(最大)@ Id, Vgs @ 25° C: 125 毫欧 @ 8A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 40nC @ 200V
输入电容 (Ciss) @ Vds: 1575pF @ 25V
功率 - 最大: 89W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
Package Marking and Ordering Information
Part Number
FDD18N20LZ
Top Mark
FDD18N20LZ
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
? BV DSS
/ ?
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V, T J = 25 o C
I D = 250 μ A, Referenced to 25 o C
V DS = 200 V, V GS = 0 V
V DS = 160 V, T C = 125 o C
V GS = ±16 V, V DS = 0 V
200
-
-
-
-
-
0.2
-
-
- ?
-
-
1
10
±10
V
V/ o C
? A
? A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ Α
V GS = 10 V, I D = 8A
V GS = 5 V, I D = 8 A
V DS = 20 V, I D = 2 A
1.0
- ?
-
-
-
0.10
0.11
11
2.5
0.125
0.13
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q gs
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 25 V, V GS = 0 V
f = 1 MHz
V DS = 200 V I D = 16 A
V GS = 10 V
(Note 4 )
-
-
-
-
-
-
1185
190
25
30
3.5
8.5
1575
255
40
40
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 100 V, I D = 16 A
V GS = 10 V, R G = 25 ?
(Note 4)
-
-
-
-
15
20
135
50
40
50
280
110
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
V SD
t rr
Q rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 4 A
Reverse Recovery Time V GS = 0 V, I SD = 4 A
Reverse Recovery Charge dI F /dt = 100 A/ μ s
-
-
-
-
-
-
-
-
105
0.4
16
64
1.4
-
-
A
A
V
ns
? C
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 2.5 mH, I AS = 16 A, V DD = 50 V, R G = 25 Ω , starting T J = 25°C.
3: I SD ≤ 16 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25°C.
4: Essentially independent of operating temperature typical characteristics.
?201 1 Fairchild Semiconductor Corporation
FDD18N20LZ Rev. C1
2
www.fairchildsemi.com
相关PDF资料
PDF描述
FDD2572_F085 MOSFET N-CH 150V 29A DPAK
FDD2582 MOSFET N-CH 150V 21A DPAK
FDD2670 MOSFET N-CH 200V 3.6A D-PAK
FDD26AN06A0_F085 MSOFET N-CH 60V 36A DPAK-3
FDD306P MOSFET P-CH 12V 6.7A DPAK
相关代理商/技术参数
参数描述
FDD20AN06A0 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD20AN06A0_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 45A, 20mW
FDD20AN06A0_F085 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD20AN06A0_Q 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD20AN06A0_SB82095 制造商:Fairchild Semiconductor Corporation 功能描述: