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| 型号： | FDD2582 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 21A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 21A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 66 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1295pF @ 25V |
| 功率 - 最大： | 95W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD2582DKR |
September 2002
FDD2582
N-Channel PowerTrench ? MOSFET
150V, 21A, 66m ?
Features
? r DS(ON) = 58m ? (Typ.), V GS = 10V, I D = 7A
? Q g (tot) = 19nC (Typ.), V GS = 10V
? Low Miller Charge
? Low Q RR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? Qualified to AEC Q101
Formerly developmental type 82855
Applications
? DC/DC converters and Off-Line UPS
? Distributed Power Architectures and VRMs
? Primary Switch for 24V and 48V Systems
? High Voltage Synchronous Rectifier
? Direct Injection / Diesel Injection System
? 42V Automotive Load Control
? Electronic Valve Train System
DRAIN
(FLANGE)
GATE
SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
G
D
S
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
150
± 20
Units
V
V
Drain Current
I D
E AS
P D
T J , T STG
Continuous (T C = 25 o C, V GS = 10V)
Continuous (T C = 100 o C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, R θ JA = 52 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
21
15
3.7
Figure 4
59
95
0.63
-55 to 175
A
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
R θJC
R θ JA
R θ JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
2
1.58
100
52
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2002 Fairchild Semiconductor Corporation
FDD2582 Rev. B
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| FDD2582_Q | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDD2670 | 功能描述:MOSFET N-CH 200V 18A Q-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD26AN06A0 | 功能描述:MOSFET 60V 36A 26 OHM N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD26AN06A0_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 36A, 26m?? |
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