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参数资料
| 型号： | FDD3510H |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DUAL N/P 80V DPAK-4 |
| 产品目录绘图： | MOSFET DPAK-4 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.3A，2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 4.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 800pF @ 40V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | TO-252-4L |
| 包装： | 标准包装 |
| 其它名称： | FDD3510HDKR |
April 2008
FDD3510H
Dual N & P-Channel PowerTrench ? MOSFET
N-Channel: 80V, 13.9A, 80m ? P-Channel: -80V, -9.4A, 190m ?
Features
General Description
Q1: N-Channel
These dual N and P-Channel enhancement
mode Power
Max r DS(on) = 80m ? at V GS = 10V, I D = 4.3A
Max r DS(on) = 88m ? at V GS = 6V, I D = 4.1A
Q2: P-Channel
Max r DS(on) = 190m ? at V GS = -10V, I D = -2.8A
Max r DS(on) = 224m ? at V GS = -4.5V, I D = -2.6A
100% UIL Tested
RoHS Compliant
MOSFETs are produced using Fairchild Semiconductor ’s
advanced PowerTrench ? process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Applications
Inverter
H-Bridge
D1/D2
G1
G2
S2
G1
D1
G2
D2
S1
Dual DPAK 4L
S1
N-Channel
S2
P-Channel
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
Parameter
T C = 25°C
Q1
80
±20
13.9
Q2
-80
±20
-9.4
Units
V
V
I D
- Continuous
T A = 25°C
4.3
-2.8
A
- Pulsed
20
-10
Power Dissipation for Single Operation
T C = 25°C
(Note 1)
35
32
P D
T A = 25°C (Note 1a)
T A = 25°C (Note 1b)
3.1
1.3
W
E AS
Single Pulse Avalanche Energy
(Note 3)
37
54
mJ
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JC
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
(Note 1)
3.5
3.9
°C/W
Package Marking and Ordering Information
Device Marking
FDD3510H
Device
FDD3510H
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
?2008 Fairchild Semiconductor Corporation
FDD3510H Rev.C
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD3570 | 功能描述:MOSFET 80V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD3570_0011 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET |
| FDD3580 | 功能描述:MOSFET 80V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD3670 | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD3670_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET |
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