- 您现在的位置：买卖IC网 > Datasheet目录416 > FDD3670 (Fairchild Semiconductor)MOSFET N-CH 100V 34A D-PAK Datasheet资料下载
参数资料
| 型号： | FDD3670 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 34A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 32 毫欧 @ 7.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2490pF @ 50V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 带卷 (TR) |
September 2013
FDD3670
100V N-Channel PowerTrench ? MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
? 34 A, 100 V. R DS(ON) = 32 m ? @ V GS = 10 V
R DS(ON) = 35 m ? @ V GS = 6 V
? Low gate charge (57 nC typical)
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D
G
S
TO-252
D
G
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
100
± 20
Units
V
V
I D
Drain Current
Drain Current
– Continuous
– Pulsed
(Note 1)
(Note 3)
34
100
A
P D
Maximum Power Dissipation @ T C = 25 ° C
@ T A = 25 ° C
@ T A = 25 ° C
(Note 1)
(Note 1a)
(Note 1b)
83
3.8
1.6
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +175
° C
Thermal Characteristics
R θ J C
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
1.8
96
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD3670
Device
FDD3670
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDD3670 Rev C1
相关PDF资料 |
PDF描述 |
|---|---|
| FDD3672_F085 | MSOFET N-CH 100V 44A DPAK-3 |
| FDD3672 | MOSFET N-CH 100V 44A D-PAK |
| FDD3680 | MOSFET N-CH 100V 25A D-PAK |
| FDD3682_F085 | MOSFET N-CH 100V 32A DPAK |
| FDD3690 | MOSFET N-CH 100V 22A D-PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD3670_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET |
| FDD3672 | 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD3672_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -14A, 64mΩ |
| FDD3672_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ |
| FDD3672_F085 | 功能描述:MOSFET 100V NChannel UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。