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参数资料
| 型号： | FDD3670 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 34A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 32 毫欧 @ 7.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2490pF @ 50V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings
(Note 2)
W DSS
Single Pulse Drain-Source
V DD = 50 V,
I D = 7.3 A
360
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche
7.3
A
Current
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V, I D = 250 μ A
100
V
? BV DSS
? T J
I DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I D = 250 μ A, Referenced to 25 ° C
V DS = 80 V, V GS = 0 V
92
10
mV/ ° C
μ A
I GSSF
Gate–Body Leakage, Forward
V GS = 20 V,
V DS = 0 V
100
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –20 V, V DS = 0 V
–100
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 10 V, I D = 7.3 A
V GS = 10 V, I D = 7.3 A, T J = 125 ° C
V GS = 6 V, I D = 7.0 A
2
2.5
–7.2
22
39
24
4
32
56
35
V
mV/ ° C
m ?
I D(on)
On–State Drain Current
V GS
= 10 V,
V DS = 5 V
25
A
g FS
Forward Transconductance
V DS = 5 V,
I D = 7.3 A
15
31
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 50 V,
f = 1.0 MHz
V GS = 0 V,
2490
265
80
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 50 V,
V GS = 10 V,
V DS = 50 V,
V GS = 10 V
I D = 1 A,
R GEN = 6 ?
I D = 7.3 A,
16
10
56
25
57
11
26
18
84
40
80
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
15
nC
Drain –Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.7
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = 2.7 A
(Note 2)
0.72
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) R θ JA = 40oC/W when
mounted on a 1in2 pad of
b) R θ JA = 96oC/W on a
minimum mounting pad.
2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3. Pulse Id refers to Figure.9 Forward Bias Safe Operation Area.
FDD3670 Rev C1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD3670_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET |
| FDD3672 | 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD3672_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -14A, 64mΩ |
| FDD3672_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ |
| FDD3672_F085 | 功能描述:MOSFET 100V NChannel UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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