参数资料
型号: FDD2572_F085
厂商: Fairchild Semiconductor
文件页数: 4/11页
文件大小: 0K
描述: MOSFET N-CH 150V 29A DPAK
产品变化通告: Product Obsolescence 13/Aug/2010
产品目录绘图: DPAK, TO-252(AA)
标准包装: 2,500
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 29A
开态Rds(最大)@ Id, Vgs @ 25° C: 54 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 34nC @ 10V
输入电容 (Ciss) @ Vds: 1770pF @ 25V
功率 - 最大: 135W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
Typical Characteristics T C = 25 ° C unless otherwise noted
1000
10 μ s
100
STARTING T J = 25 o C
100
100 μ s
10
1ms
10
1
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
10ms
DC
1
0.1
STARTING T J = 150 o C
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
1
10 100
200
0.001
0.01 0.1
1
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
60
50
40
30
20
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
T J = 175 o C
T J = 25 o C
60
50
40
30
20
T C = 25 o C
V GS = 10V
V GS = 6V
V GS = 5V
V GS = 7V
T J = -55 o C
10
0
10
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3.0
3.5
4.0 4.5 5.0 5.5 6.0
6.5
0
1 2 3 4
5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
60
55
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
3.0
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.0
50
1.5
V GS = 10V
1.0
45
0.5
V GS = 10V, I D =9A
40
0
0
10
20
30
-80
-40
0 40 80 120 160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD2572_F085 Rev.A
4
www.fairchildsemi.com
相关PDF资料
PDF描述
FDD2582 MOSFET N-CH 150V 21A DPAK
FDD2670 MOSFET N-CH 200V 3.6A D-PAK
FDD26AN06A0_F085 MSOFET N-CH 60V 36A DPAK-3
FDD306P MOSFET P-CH 12V 6.7A DPAK
FDD3510H IC MOSFET DUAL N/P 80V DPAK-4
相关代理商/技术参数
参数描述
FDD2582 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD2582_Q 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD2612 功能描述:MOSFET 200V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD2670 功能描述:MOSFET N-CH 200V 18A Q-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD26AN06A0 功能描述:MOSFET 60V 36A 26 OHM N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube