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参数资料
| 型号： | FDD4243_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 6.7A DPAK |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 44 毫欧 @ 6.7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1550pF @ 20V |
| 功率 - 最大： | 50W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = - 250 μ A, V GS = 0V
I D = -250 μ A, referenced to 25°C
- 40
-32
V
mV /° C
I DSS
Zero Gate Voltage Drain Current
V DS = - 32V,
V GS = 0V
T J = 125°C
- 1
-100
μ A
I GSS
Gate to Source Leakage Current
V GS = ±20V, V GS = 0V
±100
nA
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = - 250 μ A
I D = -250 μ A, referenced to 25°C
- 1.4
- 1.6
4.7
- 3.0
V
mV/°C
V GS = - 10V, I D = - 6.7A
36
44
r DS(on)
Drain to Source On Resistance
V GS = - 4.5V, I D = - 5.5A
48
64
m ?
V GS = - 10V, I D = - 6.7A, T J = 125°C
53
69
g FS
Forward Transconductance
V DS = - 5V, I D = - 6.7A
16
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = -20V, V GS = 0V,
f = 1MHz
f = 1MHz
1165
165
90
4
1550
220
135
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = - 20V, I D = - 6.7A
V GS = - 10V, R GEN = 6 ?
V DD = - 20V, I D = - 6.7A
V GS = - 10V
6
15
22
7
21
3.4
4
12
26
35
14
29
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = - 6.7A
(Note 2)
0.86
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = - 6.7A, di/dt = 100A/ μ s
29
30
43
44
ns
nC
Notes:
1: R θ JA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is
guaranteed by design while R θ JC is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in 2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3: Starting T J = 25°C, L = 3mH, I AS = 7.5A, V DD = 40V, V GS = 10V.
FDD4243 Rev.C1
2
www.fairchildsemi.com
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