- 您现在的位置：买卖IC网 > Datasheet目录417 > FDD5612 (Fairchild Semiconductor)MOSFET N-CH 60V 5.4A DPAK Datasheet资料下载
参数资料
| 型号： | FDD5612 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 5.4A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 5.4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 30V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD5612DKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
V DD = 30 V,
I D = 5.4 A
90
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche
5.4
A
Current
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
60
62
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = 48 V,
V GS = 20 V,
V GS = –20 V
V GS = 0 V
V DS = 0 V
V DS = 0 V
1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
1
2.4
3
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A, Referenced to 25 ° C
–6
mV/ ° C
R DS(on)
I D(on)
Static Drain–Source
On–Resistance
On–State Drain Current
V GS = 10 V, I D = 5.4 A
V GS = 6 V, I D = 5 A
V GS = 10 V, I D = 5.4 A, T J = 125 ° C
V GS = 10 V, V DS = 5 V
20
36
42
64
55
64
103
m ?
A
g FS
Forward Transconductance
V DS = 5 V,
I D = 5.4 A
15
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 30 V,
f = 1.0 MHz
V GS = 0 V,
660
79
36
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 30 V,
V GS = 10 V,
V DS = 30 V,
V GS = 10 V
I D = 1 A,
R GEN = 6 ?
I D = 5.4 A,
8
4
24
4
7.5
2.5
16
8
38
8
11
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.7
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = 2.7 A
(Note 2)
0.8
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
R θ JA is the guaranteed design while R θ JA is determined by the user’s design. R θ JA has been used to determine some of the maximum ratings.
a) R θ JA = 40oC/W when
mounted on a 1in2 pad of
2oz copper.
b) R θ JA = 96oC/W when
mounted on a 0.076 in 2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDD5612 Rev C1(W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDD5614P | MOSFET P-CH 60V 15A DPAK |
| FDD5670 | MOSFET N-CH 60V 52A D-PAK |
| FDD5680 | MOSFET N-CH 60V 8.5A D-PAK |
| FDD5690 | MOSFET N-CH 60V 30A D-PAK |
| FDD5N50NZFTM | MOSFET N-CH 500V DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD5614 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V P-Channel PowerTrench MOSFET |
| FDD5614P | 功能描述:MOSFET 60V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK SINGLE PCH:ROHS COMPLIANT |
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P D-PAK |
| FDD5614P_05 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V P-Channel PowerTrench㈢ MOSFET |
发布紧急采购，3分钟左右您将得到回复。