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参数资料
| 型号： | FDD5614P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 15A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 4.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 759pF @ 30V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD5614PDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
V DD = –30 V,
I D = –4.5 A
90
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche
–4.5
A
Current
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–60
–49
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = –48 V,
V GS = 20V,
V GS = –20 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
–1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –10 V, I D = –4.5 A
–1
–1.6
4
76
–3
100
V
mV/ ° C
m ?
On–Resistance
V GS = –4.5 V, I D = –3.9 A
V GS = –10 V,I D = –4.5 A,T J =125 ° C
99
137
130
185
I D(on)
On–State Drain Current
V GS = –10 V, V DS = –5 V
–20
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –3 A
8
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –30 V,
f = 1.0 MHz
V GS = 0 V,
759
90
39
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –30 V,
V GS = –10 V,
V DS = –30V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –4.5 A,
7
10
19
12
15
2.5
14
20
34
22
24
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
3.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–3.2
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = –3.2 A
(Note 2)
–0.8
–1.2
V
Voltage
FDD5614P Rev C1(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK SINGLE PCH:ROHS COMPLIANT |
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P D-PAK |
| FDD5614P_05 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V P-Channel PowerTrench㈢ MOSFET |
| FDD5614P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDD5614P Series 60 V 100 mOhm P-Channel PowerTrench Mosfet TO-252 |
| FDD5670 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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