参数资料
型号: FDD5614P
厂商: Fairchild Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 60V 15A DPAK
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 100 毫欧 @ 4.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 24nC @ 10V
输入电容 (Ciss) @ Vds: 759pF @ 30V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: FDD5614PDKR
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) R θ JA = 40°C/W when mounted on a
1in 2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
P D
b) R θ JA = 96°C/W when mounted
on a minimum pad.
3. Maximum current is calculated as:
R DS ( ON )
where P D is maximum power dissipation at T C = 25°C and R DS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A
FDD5614P Rev C1(W)
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FDD5614P 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK SINGLE PCH:ROHS COMPLIANT
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FDD5670 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube