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参数资料
| 型号： | FDD850N10L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 15.7A DPAK-3 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1465pF @ 25V |
| 功率 - 最大： | 50W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 带卷 (TR) |
Package Marking and Ordering Information
Part Number
FDD850N10L
Top Mark
FDD850N10L
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V
100
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 80 V, V GS = 0 V
V DS = 80 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
25 o C
-
-
-
-
0.1
-
-
-
-
1
500
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 12 A
V GS = 5 V, I D = 12 A
V DS = 10 V, I D = 15.7 A
1.0
-
-
-
-
61
64
31
2.5
75
96
-
V
m Ω
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25 V, V GS = 0 V,
f = 1 MHz
V GS = 10 V
-
-
-
-
1100
80
42
22.2
1465
105
-
28.9
pF
pF
pF
nC
Q g(tot)
Q gs
Q gd
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V GS = 5 V
V DS = 80 V,
I D = 15.7 A
-
-
-
12.3
3.0
5.7
16.0
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
V DD = 50 V, I D = 15.7 A,
V GS = 5 V, R G = 4.7 Ω
f = 1 MHz
(Note 4)
-
-
-
-
-
17
21
27
8
1.75
44
52
64
26
-
ns
ns
ns
ns
Ω
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
15.7
63
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 12 A
V GS = 0 V, V DS = 80 V, I SD = 15.7 A,
dI F /dt = 100 A/ μ s
-
-
-
-
38
50
1.3
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, I AS = 9.1 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 15.7 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
2
www.fairchildsemi.com
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