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| 型号： | FDG330P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 2A SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 477pF @ 6V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = –250 μ A
–12
V
? BV DSS
? T J
I DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I D = –250 μ A, Referenced to 25 ° C
V DS = –10 V, V GS = 0 V
–2.7
–1
mV/ ° C
μ A
I GSSF
I GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V GS = 8 V,
V GS = –8 V,
V DS = 0 V
V DS = 0 V
100
–100
nA
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = –250 μ A
–0.4
–0.7
–1.5
V
? V GS(th)
? T J
R DS(on)
I D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
I D = –250 μ A, Referenced to 25 ° C
V GS = –4.5 V, I D = –2.0 A
V GS = –2.5 V, I D = –1.7 A
V GS = –1.8 V, I D = –1.4 A
V GS = –4.5 V, I D = –2.0 A, T J = 125°C
V GS = –4.5 V, V DS = –5 V
–6
2.3
84
107
145
98
110
150
215
148
mV/ ° C
m ?
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –2.0 A
6.8
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –6.0 V,
f = 1.0 MHz
V GS = 0 V,
477
186
124
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V DD = –6.0 V, I D = 1 A,
V GS = –4.5 V, R GEN = 6 ?
10
11
12
18
20
20
22
32
ns
ns
ns
ns
Q g
Q gs
Total Gate Charge
Gate–Source Charge
V DS = –6.0 V,
V GS = –4.5 V
I D = –2.0 A,
5
0.8
7
nC
nC
Q gd
Gate–Drain Charge
1.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–0.62
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = –0.62 A
(Note 2)
–0.7
–1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a.)
b.)
170°C/W when mounted on a 1 in 2 pad of 2 oz. copper.
260°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDG330P Rev D (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG330P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDG330P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG332PZ | 功能描述:MOSFET -20V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG361N | 功能描述:MOSFET N-Ch PowerTrench Specified 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-G4 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
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