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| 型号： | FDG6306P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH DUAL 20V 600MA SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | MOSFET SC70-6 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 600mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 420 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 114pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDG6306PDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Drain–Source Breakdown
V GS = 0 V,
I D = –250 μ A
–20
V
Voltage
? BV DSS
? T J
I DSS
Breakdown Voltage Temperature I D = –250 μ A, Referenced to 25 ° C
Coefficient
Zero Gate Voltage Drain Current V DS = –16 V, V GS = 0 V
–14
–1
mV/ ° C
μ A
I GSSF
I GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V GS = –12 V, V DS = 0 V
V GS = 12 V, V DS = 0 V
–100
100
nA
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = –250 μ A
–0.6
–1.2
–1.5
V
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I D = –250 μ A, Referenced to 25 ° C
V GS = –4.5 V, I D = –0.6 A
V GS = –2.5 V, I D = –0.5 A
V GS
= –4.5 V, I D = –0.6 A, T J =125°C
3
300
470
400
420
630
700
mV/ ° C
M ?
I D(on)
On–State Drain Current
V GS
= –4.5 V, V DS = –5 V
–2
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –0.6 A
1.8
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V, V GS = 0 V,
f = 1.0 MHz
114
24
9
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V DD = –10 V, I D = 1 A,
V GS = –4.5 V, R GEN = 6 ?
V DS = –10 V, I D = –0.6 A,
V GS = –4.5 V
5.5
14
6
1.7
1.4
0.3
0.4
11
25
12
3.4
2.0
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–0.25
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = –0.25 A (Note 2)
–0.77
–1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ JA is determined by the user's board design. R θ JA = 415°C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDG6306P Rev C (W)
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| FDG6317NZ | MOSFET N-CH DUAL 20V SC70-6 |
| FDG6318PZ | MOSFET P-CH DUAL 20V SC70-6 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6306P_D87Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6306P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6308 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDG6308P | 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6308P_Q | 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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