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参数资料
| 型号： | FDMA3023PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 30V MICROFET6 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 530pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA3023PZDKR |
January 2013
FDMA3023PZ
Dual P-Channel PowerTrench ? MOSFET
-30 V, -2.9 A, 90 m Ω
Features
Max r DS(on) = 90 m Ω at V GS = -4.5 V, I D = -2.9 A
Max r DS(on) = 130 m Ω at V GS = -2.5 V, I D = -2.6 A
Max r DS(on) = 170 m Ω at V GS = -1.8 V, I D = -1.7 A
Max r DS(on) = 240 m Ω at V GS = -1.5 V, I D = -1.0 A
Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
HBM ESD protection level > 2 kV (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony
oxides
PIN 1
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
S1
G1
D2
2
D1
D2
S1
G1
1 1
2
6 6
5 5
D1
G2
3
4
D1
G2 S2
D2
3
4
S2
MicroFET 2x2
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-30
±8
Units
V
V
I D
P D
T J , T STG
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
-2.9
-6
1.4
0.7
-55 to +150
A
W
°C
Thermal Characteristics
R θ JA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
86
R θ JA
R θ JA
R θ JA
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
69
151
°C/W
Package Marking and Ordering Information
Device Marking
323
Device
FDMA3023PZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2013 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.C
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA3028N | MOSFET N-CH 30V DUAL 6MICROFET |
| FDMA410NZ | MOSFET N-CH 20V 9.5A 6-MICROFET |
| FDMA420NZ | MOSFET N-CH 20V 5.7A MICROFET |
| FDMA430NZ | MOSFET N-CH 30V 5A MICROFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA3027PZ | 功能描述:MOSFET -30V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA3028N | 功能描述:MOSFET 30V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA410NZ | 功能描述:MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA420NZ | 功能描述:MOSFET 20V 5.7A 30OHM SINGLE NCH 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA420NZ_0609 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mз |
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