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| 型号： | FDMA3028N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL 6MICROFET |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 3.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 375pF @ 15V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VDFN 裸露焊盘 |
| 供应商设备封装： | MicroFET 2x2 |
| 包装： | 带卷 (TR) |
FDMA3028N
Dual N-Channel PowerTrench ? MOSFET
30 V, 3.8 A, 68 m Ω
June 2013
Features
Max . R DS(on) = 68 m Ω at V GS = 4.5 V, I D = 3.8 A
Max . R DS(on) = 88 m Ω at V GS = 2.5 V, I D = 3.4 A
Max . R DS(on) = 123 m Ω at V GS = 1.8 V, I D = 2.9 A
Low profile - 0. 8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra-portable applications. It features two inde p endent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses. The Micr o FET 2x2 package offe rs
exceptional thermal performance for its physical size and is well
suited to linear mode applications.
PIN 1
S1
D1
G1
D2
D2
S1 1
G1 2
6
5
D1
G2
D1
G2 S2
D2 3
4
S2
Top
Bottom
MicroFET 2x2
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
Parameter
Ratings
Units
V DS
V GS
I D
P D
T J , T STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
30
±12
3.8
16
1.5
0.7
-55 to +150
V
V
A
W
°C
Thermal Characteristics
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
(Note 1b)
86
173
R θ JA
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
69
151
160
133
°C/W
Package Marking and Ordering Information
Device Marking
328
Device
FDMA3028N
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C3
1
www.fairchildsemi.com
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