参数资料
型号: FDMA3028N
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 30V DUAL 6MICROFET
标准包装: 3,000
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 68 毫欧 @ 3.8A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 5.2nC @ 5V
输入电容 (Ciss) @ Vds: 375pF @ 15V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: 6-VDFN 裸露焊盘
供应商设备封装: MicroFET 2x2
包装: 带卷 (TR)
Electrical Characteristics T J = 25 °C unless otherwise noted
Notes:
1. R θ JA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ JA is determined by the
user's board design.
(a) R θ JA = 86 °C/W when mounted on a 1 in 2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) R θ JA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) R θ JA = 69 o C/W when mounted on a 1 in 2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) R θ JA = 151 o C/W when mounted on a minimum pad of 2 oz copper. For dual operation.
(e) R θ JA = 160 o C/W when mounted on a 30mm 2 pad of 2 oz copper. For single operation.
(f) R θ JA = 133 o C/W when mounted on a 30mm 2 pad of 2 oz copper. For dual operation.
a. 86 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
c. 69 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
e. 160 °C/W when mounted on
30mm 2 pad of 2 oz copper
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
b. 173 °C/W when mounted on
a minimum pad of 2 oz copper
d. 151 °C/W when mounted on
a minimum pad of 2 oz copper
f. 133 °C/W when mounted on
30mm 2 of 2 oz copper
?2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C3
3
www.fairchildsemi.com
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