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参数资料
| 型号： | FDMA3028N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL 6MICROFET |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 3.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 375pF @ 15V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VDFN 裸露焊盘 |
| 供应商设备封装： | MicroFET 2x2 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 24 V, V GS = 0 V
V GS = ±12 V, V DS = 0 V
30
23
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
r DS(on)
g FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
V GS = 4.5 V, I D = 3.8 A
V GS = 2.5 V, I D = 3.4 A
V GS = 1.8 V, I D = 2.9 A
V GS = 4.5 V, I D = 3.8 A, T J = 125 °C
V DS = 5 V, I D = 3.8 A
0.6
0.9
-3
46
56
80
72
15
1.5
68
88
123
108
V
mV/°C
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
282
40
29
2.4
375
55
45
pF
pF
pF
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 3.8 A,
V GS = 4.5 V, R GEN = 6 Ω
V DD = 15 V, I D = 3.8 A
V GS = 5 V
5.3
3
15
2.5
3.7
0.4
1
11
10
27
10
5.2
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 1.3 A
I F = 3.8 A, di/dt = 100 A/ μ s
(Note 2)
0.7
12
3.3
1.2
22
10
V
ns
nC
?2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C3
2
www.fairchildsemi.com
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