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参数资料
| 型号： | FDMB3900AN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V DUAL 8-MLP |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 890pF @ 13V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | * |
| 包装： | 带卷 (TR) |
June 2013
FDMB3900AN
Dual N-Channel PowerTrench ? MOSFET
25 V, 7.0 A, 23 m Ω
Features
Max r DS(on) = 23 m Ω at V GS = 10 V, I D = 7.0 A
Max r DS(on) = 33 m Ω at V GS = 4.5 V, I D = 5.5 A
Fast switching speed
Low gate charge
High performance trench technology for extremely low r DS(on)
High power and current handling capability
RoHS Compliant
General Description
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench ? process
that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where the low in-line power loss and fast
switching are required.
Pin 1
D2 5
D2 6
Q2
4 G2
3 S2
D1 7
Q1
2 G1
MicroFET 3X1.9
D1 8
1 S1
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
25
±20
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
T A = 25 °C
(Note 1a)
7.0
28
A
P D
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
1.6
0.8
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
80
165
°C/W
Package Marking and Ordering Information
Device Marking
3900
Device
FDMB3900AN
Package
MicroFET 3X1.9
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMB3900AN Rev.C3
1
www.fairchildsemi.com
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