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| 型号： | FDMC2523P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 150V 3A MLP 3.3SQ |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 17/March/2008 |
| 产品目录绘图： | 8-MLP, Power33, 56 Dual |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 270pF @ 25V |
| 功率 - 最大： | 42W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-Power33（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC2523PDKR |
November 2012
FDMC2523P
P-Channel QFET ?
-150V, -3A, 1.5 Ω
Features
Max r DS(on) = 1.5 Ω at V GS = -10V, I D = -1.5A
Low Crss ( typical 10pF)
Fast Switching
Low gate charge ( typical 6.2 nC )
Improved dv / dt capability
RoHS Compliant
Top
Bottom
General Description
These P-Ch annel MOSFET enhancement mode power field
effect transistors are produced using Fairchild's pr oprietary,
planar stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching per formance, and withstand high energy
pulse in the avalanche and commu tation mode. These devices
are well suited for low voltage applications such as audio
amplifier, high efficiency sw itching DC/DC converters, and DC
motor control.
Application
Active Clamp Switch
Pin 1
S
S
S
G
D
D
D
D
S
S
S
G
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V DS
V GS
I D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T C = 25°C
T C = 100°C
-150
±30
-3
-1.8
-12
V
V
A
P D
E AS
T J , T STG
T L
dv/dt
Power Dissipation (Steady State) T C = 25°C
Single Pulse Avalanche Energy (Note 5)
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Peak Diode Recovery dv/dt (Note 2)
42
3.3
-55 to +150
300
-5
W
mJ
°C
°C
V/ns
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
3.0
60
°C/W
Package Marking and Ordering Information
Device Marking
FDMC2523P
Device
FDMC2523P
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMC2523P Rev.C5
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMC2610 | MOSFET N-CH 200V 2.2A POWER33-8 |
| FDMC2674 | MOSFET N-CH 220V 1A 3.3SQ MLP |
| FDMC3020DC | MOSFET N-CH 30V 40A POWER33 |
| FDMC3612 | MOSFET N-CH 100V 8-MLP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC2523P_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel QFET -150V, -3A, 1.5ヘ |
| FDMC2523P_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel QFET?? -150V, -3A, 1.5?? |
| FDMC2610 | 功能描述:MOSFET 200V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 9.5A POWER33-8 |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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