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| 型号： | FDMC15N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 2.4A MLP |
| 产品目录绘图： | MOSFET MLP 3.3x3.3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 900 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-MLP（3.3x3.3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC15N06DKR |
December 2013
FDMC15N06
N-Channel UltraFET Power MOSFET
55 V, 15 A, 90 m Ω
Features
? R DS(on) = 75 m Ω ( Typ.) @ V GS = 10 V, I D = 15 A
? 100% Avalanche Tested
? RoHS compliant
Top
Description
These N-Channel power MOSFETs are manufactured using the
innovative UItraFET process. This advanced process technol-
ogy achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance.This device is capable of
withstanding high energy in the avalanche mode and the diode
exhibits very low reverse recovery time and stored charge. It
was designed for use in applications where power efficiency is
important, such as switching regulators, switching converters,
motor drivers, relay drivers, lowvoltage bus switches, and power
management in portable and battery-operated products.
Bottom
Pin 1
S
S
S
G
D
D
D
D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
MLP 3.3x3.3
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDMC15N06
55
Unit
V
V GSS
I D
I DM
E AS
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
- Continuous (T A = 25 o C)
- Pulsed
(Note 1a)
(Note 2)
(Note 3)
±20
15
9
2.4
60
36
V
A
A
A
mJ
(T C = 25 o C)
(T A = 25 o C)
I AR
E AR
P D
T J , T STG
T L
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
15
3.5
35
2.3
-55 to +150
300
A
mJ
W
W
o C
o C
Thermal Characteristics
Symbol
Parameter
FDMC15N06
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1a)
3.5
53
o
C/W
?2012 Fairchild Semiconductor Corporation
FDMC15N06 Rev. C1
1
www.fairchildsemi.com
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| FDMC2523P | 功能描述:MOSFET -150V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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