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| 型号： | FDMC15N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 2.4A MLP |
| 产品目录绘图： | MOSFET MLP 3.3x3.3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 900 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-MLP（3.3x3.3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC15N06DKR |
Package Marking and Ordering Information
Part Number
FDMC15N06
Top Mark
15N06
Package
Power 33
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V, T C = 25 o C
o
V DS = 50 V, V GS = 0 V
V DS = 45 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
55
-
-
-
-
-
70
-
-
-
-
-
1
250
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 15 A
V DS = 20 V, I D = 15 A
2.0
-
-
-
0.075
5
4.0
0.090
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V
f = 1 MHz
-
-
-
265
97
28
350
130
42
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 30 V,I D = 15 A,
V GS = 10 V
(Note 4)
-
-
-
8.8
1.7
3.6
11.5
-
-
nC
nC
nC
Switching Characteristics
t d(on)
Turn-On Delay Time
-
9.5
29
ns
t r
Turn-On Rise Time
V DD = 30 V, I D = 15 A,
-
36.5
83
ns
t d(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
22.5
22
55
54
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
15
60
A
A
V SD
Drain to Source Diode Forward Voltage
V GS = 0 V, I SD = 15 A
-
-
1.25
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 15 A,
dI F /dt = 100 A/ μ s
(Note 5)
-
-
30
35
-
-
ns
nC
Notes:
1: R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
2: Repetitive rating: pulse-width limited by maximum junction temperature.
3: L = 1 mH, I AS = 8.5 A, R G = 25 Ω , starting T J = 25 ° C.
4: Essentially independent of operating temperature typical characteristics.
5: I SD ≤ 15 A, di/dt ≤ 200 A/ μ s, V DD ≤ 40 V, starting T J = 25 ° C.
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
?2012 Fairchild Semiconductor Corporation
FDMC15N06 Rev. C1
2
www.fairchildsemi.com
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