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参数资料
| 型号： | FDMC3020DC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 40A POWER33 |
| 标准包装： | 1 |
| 系列： | Dual Cool™, PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.25 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1385pF @ 15V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | * |
| 包装： | 标准包装 |
| 其它名称： | FDMC3020DCDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 24 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
30
17
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
r DS(on)
g FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
V GS = 10 V, I D = 12 A
V GS = 4.5 V, I D = 10 A
V GS = 10 V, I D = 12 A, T J = 125 °C
V DS = 5 V, I D = 12 A
1.0
1.9
-6
5.0
7.2
7.5
44
3.0
6.25
9.0
9.1
V
mV/°C
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
0.1
1038
513
87
0.9
1385
685
135
2.0
pF
pF
pF
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 12 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V,
I D = 12 A
9
3
19
2
15.5
7.1
3
2.5
18
10
35
10
23
10.6
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 12 A (Note 2)
V GS = 0 V, I S = 1.9 A (Note 2)
I F = 12 A, di/dt = 100 A/ μ s
0.82
0.73
25
9
1.3
1.2
45
18
V
ns
nC
?201 2 Fairchild Semiconductor Corporation
FDMC3020DC Rev.C 4
2
www.fairchildsemi.com
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