参数资料
型号: FDMC5614P
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET P-CH 60V 5.7A POWER33
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 17/March/2008
产品目录绘图: 8-MLP, Power33, 56 Dual
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 5.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 100 毫欧 @ 5.7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 10V
输入电容 (Ciss) @ Vds: 1055pF @ 30V
功率 - 最大: 2.1W
安装类型: 表面贴装
封装/外壳: 8-PowerVDFN
供应商设备封装: 8-Power33(3x3)
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMC5614PDKR
Typical Characteristics T J = 25°C unless otherwise noted
25
20
15
V GS = -10V
V GS = -5V
V GS = -4.5V
V GS = -3.5V
2.0
1.8
1.6
1.4
V GS = -3.0V
V GS = -3.5V
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0%MAX
V GS = -5V
10
5
0
0
V GS = -3.0V
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0%MAX
1 2 3 4
-V DS , DRAIN TO SOURCE VOLTAGE (V)
5
1.2
1.0
0.8
0
V GS = -4.5V
5 10 15
-I D , DRAIN CURRENT(A)
V GS = -10V
20
25
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
I D = -5.7A
V GS = -10V
350
300
250
200
I D = -5.7A
PULSE DURATION =300 μ s
DUTY CYCLE = 2.0%MAX
T J = 125 o C
1.0
150
0.8
0.6
100
T J = 25 o C
0.4
-50
-25 0 25 50 75 100 125
T J , JUNCTION TEMPERATURE ( o C )
150
50
2
3 4 5 6 7 8 9
-V GS , GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
30
25
20
15
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0%MAX
V DD = -5V
30
10
1
0.1
V GS = 0V
T J = 125 o C
T J = 25 o C
125 o C T J = 25 o C
10
5
0
0
T J =
T J =-55 o C
1 2 3 4 5
-V GS , GATE TO SOURCE VOLTAGE (V)
6
0.01
1E-3
1E-4
0.2
T J = -55 o C
0.4 0.6 0.8 1.0 1.2
-V SD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMC5614P Rev.C1
3
www.fairchildsemi.com
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