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参数资料
| 型号： | FDME905PT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 6-UMLP |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2315pF @ 6V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | 标准包装 |
| 其它名称： | FDME905PTFSDKR |
Typical Characteristics T J = 25 °C unless otherwise noted
30
V GS = -4.5 V
V GS = -3 V
3
20
V GS = -2.5 V
2
V GS = -1.8 V
V GS = -2.5 V
V GS = -1.8 V
10
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1
V GS = -3 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = -4.5 V
0
0.0
0.5
1.0
1.5
0
0
10 20
- I D , DRAIN CURRENT (A)
30
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.4
80
PULSE DURATION = 80 μ s
1.3
I D = -8 A
V GS = -4.5 V
60
DUTY CYCLE = 0.5% MAX
1.2
1.1
40
I D = -8 A
T J = 125 o C
1.0
20
0.9
T J = 25 o C
0.8
-75
-50
-25 0 25 50 75 100 125 150
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
30
20
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS = -5 V
T J = 150 o C
50
10
1
0.1
V GS = 0 V
T J = 150 o C
T J = 25 o C
10
T J = 25 o C
T J = -55 o C
0.01
T J = -55 o C
0
0.0
0.5
1.0
1.5
2.0
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
3
www.fairchildsemi.com
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