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参数资料
| 型号： | FDMS7602S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A，17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1750pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS7602SDKR |
August 2010
FDMS7602S
Dual N-Channel PowerTrench ? MOSFET
Q1: 30 V, 30 A, 7.5 m Ω Q2: 30 V, 30 A, 5.0 m Ω
Features
Q1: N-Channel
Max r DS(on) = 7.5 m Ω at V GS = 10 V, I D = 12 A
Max r DS(on) = 12 m Ω at V GS = 4.5 V, I D = 10 A
Q2: N-Channel
Max r DS(on) = 5.0 m Ω at V GS = 10 V, I D = 17 A
Max r DS(on) = 6.8 m Ω at V GS = 4.5 V, I D = 14 A
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual MLP package.The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
S2
S2
S2
G2
S2
5
Q2
4 D1
D1
S1/D2
S2
6
3 D1
Top
D1
D1
D1
G1
Bottom
S2
G2
7
8
Q1
2 D1
1 G1
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
V GS
I D
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
(Note 3)
T C = 25 °C
T C = 25 °C
T A = 25 °C
±20
30
50
12 1a
±20
30
80
17 1b
V
A
-Pulsed
40
60
P D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T A = 25 °C
T A = 25 °C
2.2 1a
1.0 1c
2.5 1b
1.0 1d
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
57 1a
50 1b
R θ JA
R θ JC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
125 1c
3.5
120 1d
2
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7602S
Device
FDMS7602S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMS7602S Rev.C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS7608S | MOSFET N-CH 30V DUAL 8-PQFN |
| FDMS7620S | MOSFET N-CH 30V DUAL POWER56 |
| FDMS7650DC | MOSFET N-CH 30V 47A POWER56 |
| FDMS7650 | MOSFET N-CH 30V POWER56 |
| FDMS7656AS | MOSFET N-CH 30V POWER56 |
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| FDMS7603S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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| FDMS7620S | 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7620S_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 30V DUAL POWER56 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / 30/20V Dual N-Channel Power Trench Mosfet |
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