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参数资料
| 型号： | FDMS7620S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 10.1A |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 608pF @ 15V |
| 功率 - 最大： | 2.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | Power56 |
| 包装： | * |
March 2011
FDMS7620S
Dual N-Channel PowerTrench ? MOSFET
Q1: 30 V, 10.1 A, 20.0 m Ω Q2: 30 V, 12.4 A, 11.2 m Ω
Features
Q1: N-Channel
Max r DS(on) = 20.0 m Ω at V GS = 10 V, I D = 10.1 A
Max r DS(on) = 30.0 m Ω at V GS = 4.5 V, I D = 7.5 A
Q2: N-Channel
Max r DS(on) = 11.2 m Ω at V GS = 10 V, I D = 12.4 A
Max r DS(on) = 14.2 m Ω at V GS = 4.5 V, I D = 10.9 A
Pinout optimized for simple PCB design
Thermally efficient dual Power 56 Package
RoHS Compliant
General Description
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal synchro-
nous buck power stage in terms of efficiency and PCB utilization.
The low switching loss “High Side” MOSFET is complementory
by a low conduction loss “Low Side” SyncFET.
Applications
Synchronous Buck Converter for:
Notebook System Power
General Purpose Point of Load
S2
S2
S2
G2
5
Q2
4
D1
S1/D2
6
3
Top
D1
D1
D1
G1
Bottom
Pin1
7
8
Q1
2
1
Power 56
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
V GS
I D
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
(Note 3)
T C = 25 °C
T C = 25 °C
T A = 25 °C
±20
13
26
10.1
±20
22
42
12.4
V
A
-Pulsed
27
45
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
(Note 4)
T A = 25°C
T A = 25°C
9
2.2 1a
1.0 1c
21
2.5 1b
1.0 1d
mJ
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
57 1a
125 1c
50 1b
120 1d
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7620S
Device
FDMS7620S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMS7620S Rev.C1
1
www.fairchildsemi.com
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|---|---|
| FDMS7650DC | MOSFET N-CH 30V 47A POWER56 |
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| FDMS7656AS | MOSFET N-CH 30V POWER56 |
| FDMS7658AS | MOSFET N-CH 30V POWER56 |
| FDMS7660AS | MOSFET N-CH 30V PWRSTAGE POWER56 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS7620S_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 30V DUAL POWER56 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / 30/20V Dual N-Channel Power Trench Mosfet |
| FDMS7650 | 功能描述:MOSFET 30/20V N-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7650_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30 V, 100 A, 0.99 m?? |
| FDMS7650DC | 功能描述:MOSFET 30V N-Chnl Dual Cool Pwr Trench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7656AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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