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| 型号： | FDMS7620S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 10.1A |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 608pF @ 15V |
| 功率 - 最大： | 2.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | Power56 |
| 包装： | * |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 10.1 A
V GS = 0 V, I S = 12.4 A
Q1
I F = 10.1 A, di/dt = 100 A/s
Q2
I F = 12.4 A, di/dt = 300 A/s
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.90
0.83
16
18
4
13
1.2
1.2
28
32
10
23
V
ns
nC
Notes:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined
by the user's board design.
a. 57 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. Q1: E AS of 9 mJ is based on starting T J = 25 o C, L = 0.3 mH, I AS = 8 A, V DD = 27 V, V GS = 10 V. 100% test at L = 3 mH, I AS = 2.0 A, V DD = 0 V, V GS = 15 V.
Q2: E AS of 21 mJ is based on starting T J = 25 o C, L = 0.3 mH, I AS = 12 A, V DD = 27 V, V GS = 10 V. 100% test at L = 3 mH, I AS = 3.2A, V DD = 0 V,V GS = 15 V..
?2011 Fairchild Semiconductor Corporation
FDMS7620S Rev.C1
3
www.fairchildsemi.com
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| FDMS7620S_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 30V DUAL POWER56 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / 30/20V Dual N-Channel Power Trench Mosfet |
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| FDMS7650_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30 V, 100 A, 0.99 m?? |
| FDMS7650DC | 功能描述:MOSFET 30V N-Chnl Dual Cool Pwr Trench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7656AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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