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参数资料
| 型号： | FDMS7620S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 10.1A |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 608pF @ 15V |
| 功率 - 最大： | 2.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | Power56 |
| 包装： | * |
Typical Characteristics (Q1 N-Channel) T J = 25°C unless otherwise noted
27
6
24
21
18
15
V GS = 10 V
V GS = 6 V
V GS = 4.5 V
V GS = 4 V
5
4
V GS = 3.5 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4 V
12
3
9
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2
V GS = 4.5 V
6
3
V GS = 3.5 V
1
V GS = 6 V
V GS = 10 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
3
6
9
12
15
18
21
24
27
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
I D = 10.1 A
V GS = 10 V
60
50
40
30
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
I D = 10.1 A
T J = 125 o C
20
0.8
10
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
3
4
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
27
24
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
30
10
V GS = 0 V
21
18
V DS = 5 V
T J = 150 o C
1
T J = 150 o C
15
T J = 25 o C
12
T J = 25 o C
0.1
9
6
T J = -55 o C
0.01
T J = -55 o C
3
0
1.5
2.0
2.5 3.0 3.5 4.0 4.5
V GS , GATE TO SOURCE VOLTAGE (V)
5.0
0.001
0.0
0.2 0.4 0.6 0.8 1.0
V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2011 Fairchild Semiconductor Corporation
FDMS7620S Rev.C1
4
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDMS7620S_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 30V DUAL POWER56 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / 30/20V Dual N-Channel Power Trench Mosfet |
| FDMS7650 | 功能描述:MOSFET 30/20V N-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7650_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30 V, 100 A, 0.99 m?? |
| FDMS7650DC | 功能描述:MOSFET 30V N-Chnl Dual Cool Pwr Trench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7656AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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