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参数资料
| 型号： | FDMS7608S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A，15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1510pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-MLP（5x6） |
| 包装： | 带卷 (TR) |
June 2011
FDMS7608S
Dual N-Channel PowerTrench ? MOSFET
Q1: 30 V, 22 A, 10.0 m Ω Q2: 30 V, 30 A, 6.3 m Ω
Features
Q1: N-Channel
Max r DS(on) = 10.0 m Ω at V GS = 10 V, I D = 12 A
Max r DS(on) = 13.6 m Ω at V GS = 4.5 V, I D = 10 A
Q2: N-Channel
Max r DS(on) = 6.3 m Ω at V GS = 10 V, I D = 15 A
Max r DS(on) = 7.2 m Ω at V GS = 4.5 V, I D = 13 A
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual MLP package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
S2
S2
S2
G2
S2
Q2
D1
S1/D2
D1
S2
D1
Top
D1
D1
D1
G1
Bottom
Pin1
S2
G2
Q1
D1
G1
Power 56
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
V GS
I D
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
(Note 3)
T C = 25 °C
T C = 25 °C
T A = 25 °C
±20
22
46
12 1a
±20
30
60
15 1b
V
A
-Pulsed
50
60
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
(Note 4)
T A = 25°C
T A = 25°C
29
2.2 1a
1.0 1c
33
2.5 1b
1.0 1d
mJ
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
57 1a
50 1b
R θ JA
Thermal Resistance, Junction to Ambient
125
1c
120 1d
°C/W
R θ JC
Thermal Resistance, Junction to Case
4.0
3.2
Package Marking and Ordering Information
Device Marking
FDMS7608S
Device
FDMS7608S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMS7608S Rev.C
1
www.fairchildsemi.com
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