参数资料
型号: FDMS7608S
厂商: Fairchild Semiconductor
文件页数: 3/12页
文件大小: 0K
描述: MOSFET N-CH 30V DUAL 8-PQFN
标准包装: 3,000
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12A,15A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 12A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 24nC @ 10V
输入电容 (Ciss) @ Vds: 1510pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-MLP(5x6)
包装: 带卷 (TR)
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V GS = 0
V, I S = 2 A
(Note 2)
Q1
0.75
1.1
V SD
Source-Drain Diode Forward Voltage
V GS = 0
V GS = 0
V, I S = 12 A
V, I S = 2 A
(Note 2)
(Note 2)
Q1
Q2
0.84
0.63
1.2
0.8
V
V GS = 0
V, I S = 15 A
(Note 2)
Q2
0.80
1.2
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
Q1
I F = 12 A, di/dt = 100 A/ μ s
Q2
I F = 15 A, di/dt = 300 A/ μ s
Q1
Q2
Q1
Q2
25
21
9
19
40
34
18
33
ns
nC
Notes:
1.R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 57 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
4. Q1: E AS of 29 mJ is based on starting T J = 25 o C; N-ch: L = 0.3 mH, I AS = 14 A, V DD = 27 V, V GS = 10 V. 100% tested at L = 3 mH, I AS = 3.75 A.
Q2: E AS of 33 mJ is based on starting T J = 25 o C; N-ch: L = 0.3 mH, I AS = 15 A, V DD = 27 V, V GS = 10 V. 100% tested at L = 3 mH, I AS = 3.9 A.
?2011 Fairchild Semiconductor Corporation
FDMS7608S Rev.C
3
www.fairchildsemi.com
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