参数资料
型号: FDMS7608S
厂商: Fairchild Semiconductor
文件页数: 2/12页
文件大小: 0K
描述: MOSFET N-CH 30V DUAL 8-PQFN
标准包装: 3,000
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12A,15A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 12A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 24nC @ 10V
输入电容 (Ciss) @ Vds: 1510pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-MLP(5x6)
包装: 带卷 (TR)
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 1 mA, V GS = 0 V
I D = 250 μ A, referenced to 25°C
I D = 10 mA, referenced to 25°C
V DS = 24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
30
13
19
1
500
100
100
V
mV/°C
μ A
nA
nA
On Characteristics
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
V GS = V DS , I D = 1 mA
I D = 250 μ A, referenced to 25°C
I D = 10 mA, referenced to 25°C
Q1
Q2
Q1
Q2
1.2
1.2
1.9
1.7
-6
-4
3.0
3.0
V
mV/°C
V GS = 10 V, I D = 12 A
7.4
10.0
V GS = 4.5 V, I D = 10 A
Q1
10.0
13.6
r DS(on)
Static Drain to Source On Resistance
V GS = 10 V, I D = 12 A, T J = 125°C
V GS = 10 V, I D = 15 A
V GS = 4.5 V, I D = 13 A
Q2
10.3
4.8
6.0
13.9
6.3
7.2
m Ω
V GS = 10 V, I D = 15 A, T J = 125°C
6.6
8.6
g FS
Forward Transconductance
V DD = 5 V, I D = 12 A
V DD = 5 V, I D = 15 A
Q1
Q2
54
76
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1:
V DS = 15 V, V GS = 0 V, f = 1 MHZ
Q2:
V DS = 15 V, V GS = 0 V, f = 1 MHZ
Q1
Q2
Q1
Q2
Q1
Q2
1135
1380
390
478
42
60
1510
1835
520
635
65
90
pF
pF
pF
R g
Gate Resistance
Q1
Q2
0.2
0.2
1.6
0.5
3.2
2.0
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q1
V DD = 15 V, I D = 12 A, R GEN = 6 Ω
Q2
V DD = 15 V, I D = 15 A, R GEN = 6 Ω
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
7
7
3
3
19
20
3
2
14
14
10
10
35
36
10
10
ns
ns
ns
ns
Q g(TOT)
Q g(TOT)
Q gs
Q gd
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V GS = 0V to 10 V
V GS = 0V to 5 V
Q1
V DD = 15 V,
I D = 12 A
Q2
V DD = 15 V,
I D = 15 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
18
21
9
12
3.6
3.5
2.5
3.0
24
30
14
16
nC
nC
nC
nC
?2011 Fairchild Semiconductor Corporation
FDMS7608S Rev.C
2
www.fairchildsemi.com
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