参数资料
型号: FDMS7608S
厂商: Fairchild Semiconductor
文件页数: 8/12页
文件大小: 0K
描述: MOSFET N-CH 30V DUAL 8-PQFN
标准包装: 3,000
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12A,15A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 12A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 24nC @ 10V
输入电容 (Ciss) @ Vds: 1510pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-MLP(5x6)
包装: 带卷 (TR)
Typical Characteristics (Q2 N-Channel) T J = 25°C unless otherwise noted
10
I D = 15 A
3000
8
6
4
2
V DD = 10 V
V DD = 20 V
V DD = 15 V
1000
100
f = 1 MHz
V GS = 0 V
C iss
C oss
C rss
0
0
5
10
15
20
10
0.1
1
10
30
Q g , GATE CHARGE (nC)
Figure 20. Gate Charge Characteristics
30
70
56
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 21. Capacitance vs Drain
to Source Voltage
10
T J = 25 o C
T J = 100 o C
42
V GS = 10 V
28
V GS = 4.5 V
R θ JC = 3.2 C/W
T J = 125 o C
14
Limited by Package
o
1
0.001
0.01
0.1
1
10
100
0
25
50
75
100
125
150
T C , CASE TEMPERATURE ( C )
100
t AV , TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive
Switching Capability
o
Figure 23. Maximum Continuous Drain
Current vs Case Temperature
1000
R θ JA = 120 C/W
10
100 μ s
100
SINGLE PULSE
o
1 ms
1
THIS AREA IS
10 ms
LIMITED BY r DS ( on )
SINGLE PULSE
100 ms
1s
10
0.1
T J = MAX RATED
R θ JA = 120 o C/W
T A = 25 o C
10s
DC
1
10
10
10
10
10
10
0.01
0.01
0.1
1
10
100200
0.5
-4
-3
-2
-1
0
1
100
1000
V DS , DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe
Operating Area
t, PULSE WIDTH (sec)
Figure 25. Single Pulse Maximum Power
Dissipation
?2011 Fairchild Semiconductor Corporation
FDMS7608S Rev.C
8
www.fairchildsemi.com
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