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| 型号： | FDMS86201 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 120V POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 120V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 毫欧 @ 11.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2735pF @ 60V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS86201DKR |
August 2013
FDMS86201
N-Channel Shielded Gate PowerTrench ? MOSFET
120 V, 49 A, 11.5 m Ω
Features
Shielded Gate MOSFET Technology
Max r DS(on) = 11.5 m Ω at V GS = 10 V, I D = 11.6 A
Max r DS(on) = 14.5 m Ω at V GS = 6 V, I D = 10.7 A
Advanced Package and Silicon combination for low r DS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench ? process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
DC-DC Conversion
Top
Bottom
S
S
S
Pin 1
G
S
S
D
D
S
D
D
D
D
D
G
D
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Parameter
T C = 25 °C
Ratings
120
±20
49
Units
V
V
I D
-Continuous
T A = 25 °C
(Note 1a)
11.6
A
-Pulsed
160
E AS
Single Pulse Avalanche Energy
(Note 3)
264
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
104
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.2
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86201
Device
FDMS86201
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMS86201 Rev . C2
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS86250 | MOSFET N-CH 150V 6.7A 8-PQFN |
| FDMS86252 | MOSFET N-CH 150V 16A POWER56 |
| FDMS86300DC | MOSFET N CH 80V 24A 8-PQFN |
| FDMS86300 | MOSFET N-CH 80V 19A POWER56 |
| FDMS86310 | MOSFET N-CH 80V 17A 8-PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS86202 | 制造商:Fairchild Semiconductor Corporation 功能描述:PT5 120/20V NCH POWER TRENCH MOSFET - Tape and Reel |
| FDMS8622 | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86250 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86252 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86252L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 150V 8-MLP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 150V N-Channel Shielded Gate PowerTrench MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / 150/20V N-Channel PowerTrench MOSFET |
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