- 您现在的位置：买卖IC网 > Datasheet目录422 > FDMS86201 (Fairchild Semiconductor)MOSFET N-CH 120V POWER56 Datasheet资料下载
参数资料
| 型号： | FDMS86201 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 120V POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 120V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 毫欧 @ 11.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2735pF @ 60V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS86201DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 96 V, V GS = 0 V
120
95
1
V
mV/°C
μ A
I GSS
Gate to Source Leakage Current, Forward V GS = ±20 V, V DS = 0 V
100
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
2.0
2.6
-10
4.0
V
mV/°C
V GS = 10 V, I D = 11.6 A
9.6
11.5
r DS(on)
Static Drain to Source On Resistance
V GS = 6 V, I D = 10.7 A
11.8
14.5
m Ω
V GS = 10 V, I D = 11.6 A, T J = 125 °C
15.7
21.5
g FS
Forward Transconductance
V DS = 10 V, I D = 11.6 A
39
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 60 V, V GS = 0 V,
f = 1 MHz
2056
322
15
1.2
2735
430
25
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
13
24
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 60 V, I D = 11.6 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
7.7
27
7.1
32
16
44
15
46
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to 5 V
V DD = 60 V,
I D = 11.6 A
18
8.1
26
nC
nC
Q gd
Gate to Drain “Miller” Charge
7.1
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 2 A
V GS = 0 V, I S = 11.6 A
(Note 2)
(Note 2)
0.69
0.78
1.2
1.3
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 11.6 A, di/dt = 100 A/ μ s
66
88
106
140
ns
nC
Notes :
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. Starting T J = 25 ° C; N-ch: L = 1 mH, I AS = 23 A, V DD = 120 V, V GS = 10 V. 100% test at L = 0.1 mH, I AS = 50 A.
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
?2010 Fairchild Semiconductor Corporation
FDMS86201 Rev . C2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS86250 | MOSFET N-CH 150V 6.7A 8-PQFN |
| FDMS86252 | MOSFET N-CH 150V 16A POWER56 |
| FDMS86300DC | MOSFET N CH 80V 24A 8-PQFN |
| FDMS86300 | MOSFET N-CH 80V 19A POWER56 |
| FDMS86310 | MOSFET N-CH 80V 17A 8-PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS86202 | 制造商:Fairchild Semiconductor Corporation 功能描述:PT5 120/20V NCH POWER TRENCH MOSFET - Tape and Reel |
| FDMS8622 | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86250 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86252 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86252L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 150V 8-MLP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 150V N-Channel Shielded Gate PowerTrench MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / 150/20V N-Channel PowerTrench MOSFET |
发布紧急采购，3分钟左右您将得到回复。