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参数资料
| 型号： | FDMS86520 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 14A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.4 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2850pF @ 30V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（5X6），Power56 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 48 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
60
30
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
2.5
3.6
-11
4.5
V
mV/°C
V GS = 10 V, I D = 14 A
6.0
7.4
r DS(on)
Static Drain to Source On Resistance
V GS = 8 V, I D = 12.5 A
7.3
10.3
m Ω
V GS = 10 V, I D = 14 A, T J = 125 °C
9
11
g FS
Forward Transconductance
V DS = 10 V, I D = 14 A
49
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 30 V, V GS = 0 V,
f = 1 MHz
0.1
2140
624
24
0.7
2850
830
40
2.1
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
17
31
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 30 V, I D = 14 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
6.7
20
4
28
14
32
10
40
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to 8 V
V DD = 30 V,
I D = 14 A
23
10.9
33
nC
nC
Q gd
Gate to Drain “Miller” Charge
5.6
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 2.1 A
V GS = 0 V, I S = 14 A
I F = 14 A, di/dt = 100 A/ μ s
I F = 14 A, di/dt = 300 A/ μ s
(Note 2)
(Note 2)
0.74
0.83
37
21
31
40
1.2
1.3
60
35
49
64
V
ns
nC
ns
nC
Notes :
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. E AS of 86 mJ is based on starting T J = 25 ° C, L = 0.3 mH, I AS = 24 A, V DD = 54 V, V GS = 10 V.
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
?2013 Fairchild Semiconductor Corporation
FDMS86520 Rev. C2
2
www.fairchildsemi.com
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