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参数资料
| 型号： | FDN342P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| 中文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 307K |
| 代理商： | FDN342P |
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current,
Forward
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A,Referenced to 25
°
C
-20
V
Breakdown Voltage Temperature
-16
mV/
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
-1
100
μ
A
nA
V
GS
= -12 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A,Referenced to 25
°
C
-0.6
-1.05
3
-1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -4.5 V, I
D
= -2 A
V
GS
= -4.5 V, I
D
= -2 A,T
J
=125
°
C
V
GS
= -2.5 V, I
D
= -1.5 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -5 A
0.062
0.086
0.099
0.08
0.14
0.13
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-5
A
S
7
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
635
175
75
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
20
8
9
19
6.3
1.5
1.7
35
16
18
32
9
ns
ns
ns
ns
nC
nC
nC
V
DD
= -10 V, I
D
= -1 A
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -10 V, I
D
= -2 A
V
GS
= -4.5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
-0.42
-1.2
A
V
V
GS
= 0 V, I
S
= -0.42 A
(Note 2)
-0.7
θ
θ
θ
!
≤
"##
μ
$%&
≤
'#(
) '*#
°
&+!
##'
'&
) ',#
°
&+!
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相关代理商/技术参数 |
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|---|---|
| FDN342P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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| FDN352AP_0508 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, PowerTrench MOSFET |
| FDN352AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN352AP Series 30 V 180 mOhm Single P-Channel PowerTrench Mosfet SSOT-3 |
| FDN357N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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