参数资料
型号: FDN342P
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: P-Channel 2.5V Specified PowerTrench⑩ MOSFET
中文描述: 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SUPERSOT-3
文件页数: 3/8页
文件大小: 307K
代理商: FDN342P
!
"
#$
%
#$
&
"
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2.0A
V
GS
= -4.5V
0
2
4
6
8
0.4
1.4
2.4
3.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0
0.1
0.2
0.3
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1A
T
A
= 125
o
C
T
A
= 25
o
C
0
5
10
15
20
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
V
GS
= -4.5V
-2.5V
-3.5V
-3.0V
-2.0V
-4.0V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
- I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -2.5V
-3.5V
-4.5V
-3.0V
-4.0V
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FDN342P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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FDN357N 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube